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(R)
SMTHDTxx
Application Specific Discretes TRISILTM TM A.S.D. DISCRETE SOLUTION FOR ISDN PROTECTION
FEATURES UNDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT: IPP = 75 A , 10/1000 s. HOLDING CURRENT = 150mA. BREAKDOWN VOLTAGE: SMTHDT58 = 58V. SMTHDT80 = 80V. SMTHDT120 = 120V. PACKAGES: SMTHDTxx = SURFACE MOUNT PACKAGE. DESCRIPTION: TRIBALANCED PROTECTION Dedicated protection devices for ISDN LINE CARD and high speed data telecom lines. Used with the recommended configuration using 3 components, they will provide = - Dual bidirectionnal protection, with fixed breakdown voltage in both common and differential modes. - Low capacitancesfrom lines to ground. - Very good capacitance balance : C= 30 pF. ABSOLUTE RATINGS (limiting values) (-40C Tamb +85C) Symbol IPP ITSM di/dt dv/dt Tstg Tj Parameter Peak pulse current Non repetitive surge peak on-state current Critical rate of rise of on-state current Critical rate of rise of off-state voltage 10/1000 s 8/20 s tp = 20 ms Non repetitive 67% VBR Value 75 150 30 100 5 - 40 to + 150 + 150 Unit A A A/s KV/s C C
SMC
FUNCTIONAL DIAGRAM.
A
K
Storage and operating junction temperature range
THERMAL RESISTANCES Symbol Rth (j-l) Parameter Junction-leads Thermal Resistance SMC Value 200 Unit C/W
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April 1999 - Ed: 1A
SMTHDTxx
Symbol VRM VBR VBO IH VT VF IBO IPP VF
Parameter Stand-off voltage Breakdown voltage Breakover voltage Holding current On-state voltage Forward Voltage Drop Breakover current Peak pulse current Forward Voltage Drop
VBO VBR V RM VT VF I RM 1mA IH I BO IT I PP V I IF
PARAMETERS RELATED TO THE DIODE. Parameter VF Test conditions IF = 5A, TP = 500 s Value 5 Unit V
PARAMETERS RELATED TO THE PROTECTION TRISIL. Types IR max @ VRM VBR min
@ IR
VBO max min
IBO max
IH min
VT max
C max
note1 note1 note1 note1 note2 note3 A SMTHDT58 SMTHDT80 SMTHDT120 10 10 10 V 56 68 102 V 58 80 120 mA 1 1 1 V 80 120 180 mA 150 150 150 mA 800 800 800 mA 150 150 150 V 5 5 5 pF 400 250 200
All parameters tested at 25 C, except where indicated. Note 1 : See the reference test circuit for IH, IBO and VBO parameters. Note 2 : Square pulse Tp = 500 s - IT = 5A. Note 3 : VR = 1V, F = 1MHz.
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SMTHDTxx
REFERENCE TEST CIRCUIT FOR IH, IBO and VBO parameters :
Tp = 20ms
Auto Transformer 220V/2A
static relay. K
R1
140
R2
240
220V
Vout IBO , IH measure
Transformer 220V/ 800V 5A
D.U.T
V BO measure
TEST PROCEDURE : Pulse Test duration (Tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBR 150 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBR 150 Volt - VOUT = 480 VRMS, R2 = 240 . FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT = GO - NOGO TEST.
25 A D.U.T
Vbat = 48V
15
Switch
20 220nF 50
F
Vp = 1KV
K
Surge Generator 10/700 sec Vp =1KV / Ipp = 25A
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. This test can be performed if the reference test circuit can't be implemented. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 25A , 10/700 s. 3) The D.U.T will come back to the OFF-State within a duration of 50 ms max.
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SMTHDTxx
APPLICATION NOTE
ISDN PROTECTION.
LINE A A 3.TPUxx or 3.SMTHDTxx LINE A CA GND
B LINE B LINE B
CB
TRIPOLE PROTECTION
FULL BALANCED PROTECTION
RECOMMENDED CONFIGURATION FOR TRIBALANCED PROTECTION MODE.
CAPACITANCE CHARACTERISTICS Type CONFIGURATION LINE A SMTHDT58 SMTHDT80 SMTHDT120 48 56 110 LINE B 0 0 0 CA pF Max 80 70 70 CB pF Max 60 50 50
C
pF Max 30 30 30
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GND
C
SMTHDTxx
APPLICATION NOTE
Discrete ISDN Protection solution
LINE A A 3 TPUxx or 3 SMTHDTxx
TRANSFORMER
A A R or PTC TPUxx B TPUxx GND R or PTC
GND
GND
B LINE B
EQUIVALENT PROTECTION FUNCTION U Interface Protection S Interface Protection
R or PTC
A TPUxx B
GND
R or PTC R or PTC
B
R or PTC
This topology assumes the same breakdown voltage level in positive and negative for differential or common mode surge.
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SMTHDTxx
ORDER CODE
MARKING
SM THDT 80
Package SMC
Type SMTHDT58 SMTHDT80 SMTHDT120
Marking W01 W03 W05
Surface Mount
Unidirectionnal
Breakdown Voltage
PACKAGE MECHANICAL DATA SMC
E1
REF.
D
A1 A2 b c
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 1.90 2.45 0.075 0.096 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063
E
E
A1
E1 E2 D
b
C E2 L
A2
L
FOOTPRINT DIMENSIONS (in millimeters)
3.3
2.0
4.2
2.0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6

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